標題: The effect of native oxide on thin gate oxide integrity
作者: Chin, A
Lin, BC
Chen, WJ
Lin, YB
Thai, C
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Nov-1998
摘要: We have studied the effect of native oxide on thin gate oxide integrity. Much improved leakage current of gate oxide can be obtained by in situ desorbing the native oxide using a HF-vapor treated and H-2 backed process. Furthermore, extremely sharp interface between oxide and Si is obtained, and good oxide reliability is achieved even under a high current density stress of 11 A/cm(2) and a large charge injection of 7.0 x 10(4) C/cm(2). The presence of native oxide will increase the interface roughness, gate oxide leakage current and stress-induced hole trap.
URI: http://dx.doi.org/10.1109/55.728901
http://hdl.handle.net/11536/31785
ISSN: 0741-3106
DOI: 10.1109/55.728901
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 19
Issue: 11
起始頁: 426
結束頁: 428
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