標題: Magneto-luminescence of quasi-zero dimensional In0.25Ga0.75As/GaAs quantum dots
作者: Cheng, HH
Nicholas, RJ
Priest, A
Tsai, FY
Lee, CP
Sanchez-Dehesa, J
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: quantum well;quantum dot;megagauss;photoluminescence
公開日期: 1-Dec-1998
摘要: We report photoluminescence measurements on In0.25Ga0.75As/GaAs quantum well and dots grown on (1 1 1)B GaAs substrate in high magnetic fields up to 45 Tesla. A well-defined PL line with full width at half maximum of approximately 5.5 meV is observed. From an analysis of the zero field transition energy, we point out the importance of an internal piezoelectric field. By analyzing the diamagnetic shift of the PL in both Faraday and Voigt configurations, the optical characteristics of a quasi-zero dimensional exciton are discussed. (C) 1998 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0921-4526(98)00670-X
http://hdl.handle.net/11536/31715
ISSN: 0921-4526
DOI: 10.1016/S0921-4526(98)00670-X
期刊: PHYSICA B-CONDENSED MATTER
Volume: 256
Issue: 
起始頁: 178
結束頁: 181
Appears in Collections:Conferences Paper


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