標題: AuBe Ohmic contacts to p-type ZnTe
作者: Lan, WH
Lin, WJ
Cheng, YC
Tai, K
Tasi, CM
Wu, PH
Cheng, KH
Chou, ST
Yang, CM
Cheng, YC
Huang, KF
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
公開日期: 10-十二月-1998
摘要: Ohmic contacts of AuBe to p-ZnTe show a minimum specific contact resistance of 3.0 x 10(-6) Ohm cm(2) for a p-doping level of 1.6 x 10(19) cm(-3) and at an annealing temperature of 200 degrees C. The beryllium is very effective at improving the electrical properties of p-type contacts to ZnTe.
URI: http://hdl.handle.net/11536/31685
ISSN: 0013-5194
期刊: ELECTRONICS LETTERS
Volume: 34
Issue: 25
起始頁: 2434
結束頁: 2435
顯示於類別:期刊論文


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