標題: Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN
作者: Chen, LC
Chen, FR
Kai, JJ
Chang, L
Ho, JK
Jong, CS
Chiu, CC
Huang, CN
Chen, CY
Shih, KK
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-一月-1999
摘要: The phase evolution of oxidized (10nm) Ni/(5nm) Au films on p-GaN was examined with a field emission gun transmission electron microscope in conjunction with composition analyses to explore the mechanism of formation of low resistance ohmic contact to p-GaN. The p-GaN/Ni/Au sample heat treated above 500 degreesC in air was mainly composed of a mixture of crystalline NiO, Au and amorphous Ni-Ga-O phases. Small voids adjacent to the p-GaN film were also found. Moreover, NiO partially contacts to p-GaN as well as Au islands and the amorphous Ni-Ga-O phases. The results suggest that the crystalline NiO and/or amorphous Ni-Ga-O phases may play a significant role in the formation of a low resistance ohmic contact to p-GaN.
URI: http://hdl.handle.net/11536/31680
ISBN: 0-7503-0650-5
ISSN: 0951-3248
期刊: MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS
Volume: 
Issue: 164
起始頁: 561
結束頁: 565
顯示於類別:會議論文


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  1. 000082652400054.pdf