標題: Reduction of spontaneous surface segregation in (InP)(2)/(GaP)(2) quantum wells grown on tilted substrates
作者: Cheng, YC
Tai, KC
Chou, ST
Huang, KF
Lin, WJ
Lin, ACH
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
關鍵字: surface segregation;SPS;polarized PL;SSMBE
公開日期: 1-Jan-1999
摘要: We have studied the growth mechanism of (InP)(2)/(GaP)(2) short-period superlattices (SPS) and In(0.5)Gao(0.5)P quantum wells grown on tilted substrates using solid-source molecular beam epitaxy (SSMBE). Both the (InP)(2)/(GaP)(2) SPS and In0.5Ga0.5P quantum wells show blue shifts of photoluminescence (PL) wavelengths when the substrate's tilting angle is increased. The blue shift is more prominent in the SPS structure than in the In0.5Ga0.5P quantum wells. By comparing FL, polarized PL spectra and transmission electron micrographs, we confirm that the ordering effect exists in both the (InP)(2)/(GaP)(2) SPS and In0.5Ga0.5P quantum wells when the substrate tilt angle is small, and can be greatly reduced when the substrate lilt angle is increased. We believed that the height and density of steps on substrates with larger tilt angles repress the segregation of group III adatoms.
URI: http://dx.doi.org/10.1143/JJAP.38.17
http://hdl.handle.net/11536/31655
ISSN: 0021-4922
DOI: 10.1143/JJAP.38.17
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 38
Issue: 1A
起始頁: 17
結束頁: 21
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