標題: Exciton relaxation in Ga1-xInxAs/GaAs self-organized quantum dots
作者: Shen, JX
Oka, Y
Cheng, HH
Tsai, FY
Lee, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: transient photoluminescence;self organized quantum dots;hot excitation relaxation
公開日期: 1-Jan-1999
摘要: The exciton dynamics in Ga1-xInxAs/GaAs self-organized quantum dots grown on GaAs (1 1 1)B substrates are studied by the time-resolved photoluminescence (PL). We have found the intra-dot exciton relaxation by the reduction of the linewidth and peak energy and also by the energy-dependent PL rise time in the transient PL spectra. Compared with the energy relaxation in the reference quantum wells, we have confirmed that the exciton relaxation in three-dimensionally confined quantum dots is slower than in the quantum wells, (C) 1999 Academic Press.
URI: http://hdl.handle.net/11536/31615
ISSN: 0749-6036
期刊: SUPERLATTICES AND MICROSTRUCTURES
Volume: 25
Issue: 1-2
起始頁: 131
結束頁: 136
Appears in Collections:Conferences Paper


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