標題: Improvement of resolution by maximum entropy linear image restoration for NiSi2/Si interface
作者: Chen, FR
Kai, JJ
Chang, L
Wang, JY
Chen, WJ
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: maximum entropy;linear image restoration;interfacial structure
公開日期: 1999
摘要: A linear imaging constrained-maximum entropy method has been developed to extend the resolution from a series of defocused high-resolution images and one diffraction pattern. Our method is basically the Gerchberg-Saxton algorithm, which restores spatial information by imposing real space and Fourier space constraints cyclically. A constrained-maximum entropy method (constrained-MEM) was developed for real space constraints. This constrained-MEM finds an optimum solution of phases such that simulated images resemble the experimental image under some constraints in real space. These constraints include conservation of charge as well as a minimum of the chi(2) function, which is a measure of the level of satisfaction between simulated images and experimental images. For the Fourier space constraint, the square root intensities of diffraction spots were substituted. In this paper, we demonstrate that this method is able to extend the resolution from a series of high-resolution images and one diffraction pattern from a periodic NiSi2/Si interface. The atomic structure of the NiSi2/Si interface can be directly read out from the MEM image without a priori knowledge of the interface.
URI: http://hdl.handle.net/11536/31596
ISSN: 0022-0744
期刊: JOURNAL OF ELECTRON MICROSCOPY
Volume: 48
Issue: 6
起始頁: 827
結束頁: 836
顯示於類別:會議論文


文件中的檔案:

  1. 000085129600021.pdf