標題: The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors
作者: Wang, MF
Chien, CH
Chao, TS
Lin, HC
Jong, FC
Huang, TY
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: germanium halo implant;large-angle-tilt implant;short-channel effects;drain-induced barrier lowering;threshold-voltage lowering
公開日期: 15-一月-1999
摘要: In this paper, we report the use of shallow germanium halo doping on improving the short-channel effects of deep submicron n-channel metal-oxide-semiconductor field effect transistors. It is demonstrated that by adding a shallow (i.e., 10 keV) germanium large-angle-tilt implant (LATID), V-th lowering in short-channel transistors is significantly improved. The improvement is found to increase with increasing germanium dose. A low germanium dose (e.g., 5 x 10(12) cm(-2)) is also found to effectively improve the drain-induced barrier lowering (DIBL) of the short-channel transistors. Our results also show that junction leakage degradation, which has been previously reported to accompany germanium implants using higher energy, can be minimized by the shallow low-dose implant used in this study.
URI: http://dx.doi.org/10.1143/JJAP.38.L33
http://hdl.handle.net/11536/31578
ISSN: 0021-4922
DOI: 10.1143/JJAP.38.L33
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 38
Issue: 1AB
起始頁: L33
結束頁: L34
顯示於類別:期刊論文


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  1. 000079486600011.pdf