標題: Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic n(+)-type doped GaAs
作者: Wang, DP
Wang, KR
Huang, KF
Huang, TC
Chu, AK
電子物理學系
Department of Electrophysics
公開日期: 18-一月-1999
摘要: Photoreflectance spectroscopy of surface-intrinsic n(+)-doped (s-i-n(+)) GaAs has been measured at various power densities (P-pu) of a pump beam. Many Franz-Keldysh oscillations (FKOs) were observed above the band-gap energy, which will enable the electric-field strength (F) to be determined from the periods of the FKOs. Field F thus obtained is subject to photovoltaic effects. In order to reduce the photovoltaic effects from the pump beam, P-pu was kept below 10 mu W/cm(2) in the previous experiments. Here, we demonstrate that the built-in field can be determined at a larger P-pu by using fast Fourier transform techniques. (C) 1999 American Institute of Physics. [S0003-6951(99)02803-X].
URI: http://hdl.handle.net/11536/31573
ISSN: 0003-6951
期刊: APPLIED PHYSICS LETTERS
Volume: 74
Issue: 3
起始頁: 475
結束頁: 477
顯示於類別:期刊論文


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  1. 000078133800050.pdf