標題: The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si
作者: Wu, YH
Chen, WJ
Chin, A
Tsai, C
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 25-一月-1999
摘要: We have investigated the effect of native oxide on the epitaxial SiGe from deposited amorphous Ge on Si. Instead of epitaxial growth by molecular beam epitaxy or ultrahigh-vacuum chemical vapor deposition, the SiGe layer is formed by this simple process followed by an annealing step. As observed by transmission electron microscopy, the suppression of native oxide plays an important role to achieve epitaxial SiGe. The SiGe quality degrades with increasing native oxide thickness and becomes polycrystalline with a similar to 20 Angstrom interfacial native oxide. On the other hand, single crystalline SiGe can be routinely formed from a HF-vapor treated Si surface. (C) 1999 American Institute of Physics. [S0003-6951(99)04504-0].
URI: http://hdl.handle.net/11536/31566
ISSN: 0003-6951
期刊: APPLIED PHYSICS LETTERS
Volume: 74
Issue: 4
起始頁: 528
結束頁: 530
顯示於類別:期刊論文


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