標題: Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy
作者: Pan, YC
Lee, WH
Shu, CK
Lin, HC
Chiang, CI
Chang, H
Lin, DS
Lee, MC
Chen, WK
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
關鍵字: InN;MOVPE;nitridation;Hall;Raman
公開日期: 1-Feb-1999
摘要: Indium nitride films have been successfully grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) using TMIn and NH3 as source precursors. Experimental results indicated that pregrowth treatments, such as buffer layer growth, nitridation temperature and nitridation duration have dramatic effects on the growth of the InN films. For films nitridated at 1,000 degrees C for 40 min without any buffer layer growth, we obtained an InN film quality with Hall mobility, carrier concentration and line width of Raman E-2 mode of 270 cm(2)/V.s, 5 x 10(19) cm(-3) and 4.5 cm(-1), respectively, which is among the best quality ever reported for such type of film grown by MOVPE.
URI: http://dx.doi.org/10.1143/JJAP.38.645
http://hdl.handle.net/11536/31535
ISSN: 0021-4922
DOI: 10.1143/JJAP.38.645
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 38
Issue: 2A
起始頁: 645
結束頁: 648
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