標題: Thermal stability of amorphous-like WNx/W bilayered diffusion barrier for chemical vapor deposited-tungsten/p(+)-Si contact system
作者: Chang, KM
Deng, IC
Yeh, TH
Lain, KD
Fu, CM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CVD-W;gas phase nucleation;diffusion barrier;bilayer;nitridation
公開日期: 1-Mar-1999
摘要: The barrier characteristics of tungsten nitride/tungsten (WNx/W) bilayer formed by an in situ nitridation on a thin chemical vapor deposited amorphous-like tungsten (CVD a-W) film in CVD-W/Si contact system have been investigated. The thickness of WNx layer after a 5 min of N-2 plasma exposure at 300 degrees C approximated 50 nm and the atomic ratio of W to N in WNx layer was 2 : 1. In the CVD-W/a-WNx/a-W/Si multilayered sample, no discernible tungsten silicide was detected by X-ray diffractometer (XRD) at W/Si interface after annealing at 750 degrees C. Meanwhile, with the Rutherford backscattering spectroscopy (RBS) analysis and the measurement of p(+)n junction leakage current, the CVD-W/a-WNx/a-W/Si multilayer maintained the integrity of interface and the CVD-W/a-WNx/a-W/p(+)n diode kept the reverse leakage current density less than 9 x 10(-9) A/cm(2) while the post annealing was carried out at 700 degrees C for 30 min. As the experimental results, the effectiveness of amorphous-like WNx/W bilayered diffusion barrier is attributed to stuff grain boundary with N atoms as well as to eliminate the rapid diffusion paths by using CVD a-W material.
URI: http://dx.doi.org/10.1143/JJAP.38.1343
http://hdl.handle.net/11536/31499
ISSN: 0021-4922
DOI: 10.1143/JJAP.38.1343
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 38
Issue: 3A
起始頁: 1343
結束頁: 1351
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