標題: Preparation and properties of tantalum pentoxide (Ta2O5) thin films for ultra large scale integrated circuits (ULSIs) application - A review
作者: Ezhilvalavan, S
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-三月-1999
摘要: Tantalum pentoxide (Ta2O5) thin films have rapidly evolved into an important field of research/development for both basic and applied science with the promise of creating a new generation of advanced micro devices for electronics applications. This paper provides a broad review of the current status and future trends of Ta2O5 thin films as a high ly promising storage dielectric material for high-density dynamic random access memory applications. Various methods of thin film material processing are briefly reviewed. The physical, electrical and dielectric characteristics of Ta2O5 thin films with specific examples from recent literature and the associated conduction mechanisms are summarized and discussed. Some suggestions to improve the electrical properties of the films are finally included. (C) 1998 Kluwer Academic Publishers.
URI: http://dx.doi.org/10.1023/A:1008970922635
http://hdl.handle.net/11536/31493
ISSN: 0957-4522
DOI: 10.1023/A:1008970922635
期刊: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume: 10
Issue: 1
起始頁: 9
結束頁: 31
顯示於類別:期刊論文


文件中的檔案:

  1. 000079946300003.pdf