標題: Formation of silicided shallow p(+) n junctions by BF2+ implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidation
作者: Juang, MH
Hu, MC
Yang, CJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-三月-1999
摘要: The process scheme that forms NiSi-silicided shallow p(+)n junctions by BF2+ implantation into thin amorphous-Si (a-Si) or Ni/a-Si films on Si substrates and subsequent Ni silicidation has been studied. As for the scheme using a-Si as an implantation barrier, an NiSi-silicided junction with a leakage of about 0.7 nA/cm(2) at - 5 V is obtained by the sample Ni silicided at 700 degrees C for 30 min. The implantation energy and the crystallinity of the deposited Si films after annealing would greatly affect the junctions formed at various temperatures, attributable to different, implantation effects and boron depth profile. However, the junctions formed by rapid thermal processing or high implant energy are considerably degraded at 800 degrees C, attributable to anomalous Ni penetration into the Si substrate with the further silicidation of NiSi into NiSi2. On the other hand, the specimens with Ni/a-Si as an implantation barrier sustain few defects, thus significantly suppressing the junction degradation at 800 degrees C. However the formed junctions are worse than those by the former scheme, mainly due to lower dopant drive-in efficiency. (C) 1999 American Vacuum Society. [S0734-211X(99)03902-5].
URI: http://hdl.handle.net/11536/31489
ISSN: 1071-1023
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 17
Issue: 2
起始頁: 392
結束頁: 396
顯示於類別:期刊論文


文件中的檔案:

  1. 000079759500024.pdf