標題: Effect of nonparabolicity on free-carrier absorption in n-type InSb films for polar optical phonon scattering
作者: Wu, CC
Lin, CJ
應用數學系
電子工程學系及電子研究所
Department of Applied Mathematics
Department of Electronics Engineering and Institute of Electronics
關鍵字: free-carrier absorption;optical phonon scattering;electromagnetic radiation
公開日期: 1-Mar-1999
摘要: The free-carrier absorption in n-type InSb films has been studied for quantum well structures fabricated from III-V semiconducting materials where the polar optical phonon scattering is predominant. We consider here two special cases: the electromagnetic radiation is polarized parallel to the layer plane and perpendicular to the layer plane separately. The energy band of electrons in semiconductors is assumed to be nonparabolic. Results show that when the electromagnetic radiation is polarized parallel to the layer plane, the free-carrier absorption coefficient is independent of temperature in a small quantum well region such as d < 30 Angstrom, but the absorption coefficient oscillates with the quantum well and depends upon the temperature in the region of larger quantum wells. When the electromagnetic radiation is polarized perpendicular to the layer plane, the dependence of the free-carrier absorption coefficient on the quantum well and temperature becomes quite complicated. (C) 1999 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0921-4526(98)01220-4
http://hdl.handle.net/11536/31483
ISSN: 0921-4526
DOI: 10.1016/S0921-4526(98)01220-4
期刊: PHYSICA B
Volume: 263
Issue: 
起始頁: 208
結束頁: 210
Appears in Collections:Conferences Paper


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