標題: Deuterium effect on stress-induced leakage current
作者: Lin, BC
Cheng, YC
Chin, A
Wang, T
Tsai, C
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: stress-induced leakage current;SILC;ultra thin oxide;deuterium;annealing
公開日期: 1-Apr-1999
摘要: We have studied and compared stress-induced leakage current in oxides subjected to H-2 and D-2 annealing. There is not much difference in stress-induced leakage current between thick 70-Angstrom-oxides annealed by these two isotopes. In sharp contrast, an improvement of several-fold in stress-induced leakage current is observed in 27-Angstrom-thick oxides annealed in D-2 ambient compared to that annealed in H-2. The significant improvement in this direct-tunneling oxide may be due to the passivation of intrinsic defects and dangling bonds in a transition SiOx layer.
URI: http://dx.doi.org/10.1143/JJAP.38.2337
http://hdl.handle.net/11536/31434
ISSN: 0021-4922
DOI: 10.1143/JJAP.38.2337
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 38
Issue: 4B
起始頁: 2337
結束頁: 2340
Appears in Collections:Conferences Paper


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