標題: Improvement of ultra-thin 3.3 nm thick oxide for co-salicide process using NF3 annealed poly-gate
作者: Chang, TY
Lei, TF
Chao, TS
Huang, CT
Chen, SK
Tuan, A
Chou, S
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: ultra-thin oxide;NF3;co-sacilide;Si-F and Si-N bonds;breakdown field;leakage current;tunneling mechanism
公開日期: 1-Apr-1999
摘要: To get high quality ultra-thin oxide is very important and difficult for IC industry now. Using NF3 annealed poly-Si gate to improve gate oxide integrity is described. However, reducing fate, source and drain parasitic resistance with gate lengths down to 0.2 mu m is another key point. Co-salicide process can successfully reduce the gate resistance even for a gate length of 0.075 mu m. Although, Co-salicide process has a leakage problem. Using NF3 annealing to prevent Co diffusing into gate oxide is described too. Results show that the optimal NF3 annealing significantly improves electrical characteristics of ultra-thin oxide and Co-salicide process in terms of leakage current and breakdown field, as compared to the samples without NF3 annealing.
URI: http://dx.doi.org/10.1143/JJAP.38.2243
http://hdl.handle.net/11536/31433
ISSN: 0021-4922
DOI: 10.1143/JJAP.38.2243
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 38
Issue: 4B
起始頁: 2243
結束頁: 2246
Appears in Collections:Conferences Paper


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