標題: A novel technology to form air gap for ULSI application
作者: Chang, KM
Yang, JY
Chen, LW
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: air gap;HSQ;low dielectric constant material;RC time constant
公開日期: 1-四月-1999
摘要: In this letter, we develop a novel process to fill the interline space with air (dielectric constant = 1). A silicon wafer, whose face is downward, patterned with metal lines, is placed on the top of another silicon wafer coated with dry polyimide. Hydrogen silsesquioxanes (HSQ), FOx-16, is diluted and trickled through the slit between the metal lines and the polyimide. Then the HSQ forms an ultrathin liquid layer on the dry polyimide and contacts with the top of the metal lines. After the liquid HSQ becomes dry, the air gap is formed, The dry polyimide has good adhesion to silicon substrate but not to the dry FOx-16, so we can separate the polyimide from the dry FOx-16 and get the air gap. The liquid property of HSQ and its high selective adsorption between the metal lines and the polyimide are utilized to form the air gap.
URI: http://dx.doi.org/10.1109/55.753761
http://hdl.handle.net/11536/31421
ISSN: 0741-3106
DOI: 10.1109/55.753761
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 20
Issue: 4
起始頁: 185
結束頁: 187
顯示於類別:期刊論文


文件中的檔案:

  1. 000079444700013.pdf