標題: Leakage current reduction of chemical-vapor-deposited Ta2O5 films on rugged polycrystalline silicon electrode for dynamic random access memory application
作者: Lin, M
Chang, CY
Huang, TY
Shieh, WY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: rugged poly-Si;RTN;RTN2O;DRAM;capacitor
公開日期: 1-四月-1999
摘要: In this paper we describe the electrical and physical characterizations of Ta2O5 films on rapid thermal nitrided (RTN) rugged polycrystalline silicon electrodes for 256 M dynamic random access memory (DRAM) application. To overcome the higher leakage on Ta2O5 films with rugged poly-Si bottom electrodes, we have successfully employed a light oxidation on rugged poly-Si grains for improving the acute angle of surface morphology, and a post-treatment with rapid thermal nitridation of N2O on Ta2O5 films to reduce the leakage. In addition, a RTN pre-treatment is also applied to prevent rugged poly-Si oxidation during a Ta2O5 film deposition that compromises the effective Ta2O5 thickness. Our results show that Ta2O5 film with an effective thickness of 1.4 nm (physical thickness=10 nm) and a low leakage current density of less than 1 X 10(-8) A/cm(2), suitable for 256 M DRAM application, can be achieved. Our results also show that while a light oxidation on rugged poly-Si grains could improve the acute angle between the rugged poly-Si and its congruent amorphous silicon sub-layer, over oxidation on rugged poly-Si grains could degrade the leakage current and the time dependent dielectric breakdown (TDDB) characteristics of the stacked capacitor.
URI: http://dx.doi.org/10.1143/JJAP.38.1927
http://hdl.handle.net/11536/31413
ISSN: 0021-4922
DOI: 10.1143/JJAP.38.1927
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 38
Issue: 4A
起始頁: 1927
結束頁: 1931
顯示於類別:期刊論文


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  1. 000081807300017.pdf