標題: MBE-Enabling technology beyond Si CMOS
作者: Chang, P.
Lee, W. C.
Lin, T. D.
Hsu, C. H.
Kwo, J.
Hong, M.
光電工程學系
Department of Photonics
關鍵字: Single crystal growth;Molecular beam epitaxy;High kappa dielectrics;High carrier mobility semiconductors;III-V MOSFET;Ge MOSFET
公開日期: 15-May-2011
摘要: Achievement of low interfacial densities of states, small equivalent oxide thickness, high kappa values, and thermal stability at high temperatures in the high kappa dielectrics on high carrier mobility semiconductors, the leading candidates for technology beyond Si CMOS, has been made using MBE. This paper reviews our recent advances in meeting the unprecedented demands in materials and physics for the new technology. Moreover, self-aligned inversion-channel InGaAs and Ge MOSFETs using MBE-Ga(2)O(3)(Gd(2)O(3)) as the gate dielectric are compared favorably with those using the gate dielectrics made from other thin film techniques. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2010.11.102
http://hdl.handle.net/11536/31397
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.11.102
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 323
Issue: 1
起始頁: 511
結束頁: 517
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000292175000130.pdf