Full metadata record
DC FieldValueLanguage
dc.contributor.authorLiou, BWen_US
dc.contributor.authorLee, CLen_US
dc.date.accessioned2014-12-08T15:46:40Z-
dc.date.available2014-12-08T15:46:40Z-
dc.date.issued1999-05-01en_US
dc.identifier.issn0894-6507en_US
dc.identifier.urihttp://dx.doi.org/10.1109/66.762886en_US
dc.identifier.urihttp://hdl.handle.net/11536/31384-
dc.description.abstractThis paper demonstrates the microcontamination analysis on wafers after they went through the conventional ULSI processing steps, by using the vapor phase decomposition/total reflection X-ray fluorescence (VPD/TXRF) technique. It was found that the wafer location in the holding cassette during the chemical cleaning step affected the cleanness of the wafer, and the class 1 environment was not enough to keep the wafer to a contamination level below 5 x 10(9) atoms/cm(2) for three days storing, The breakdown characteristic of a gate oxide was shown to be closely related with the cleanness of the surface of the oxide.en_US
dc.language.isoen_USen_US
dc.titleApplications of total reflection X-ray fluorescence to analysis of VLSI micro contaminationen_US
dc.typeLetteren_US
dc.identifier.doi10.1109/66.762886en_US
dc.identifier.journalIEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURINGen_US
dc.citation.volume12en_US
dc.citation.issue2en_US
dc.citation.spage266en_US
dc.citation.epage268en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000080122200015-
dc.citation.woscount1-
Appears in Collections:Articles


Files in This Item:

  1. 000080122200015.pdf