標題: Applications of total reflection X-ray fluorescence to analysis of VLSI micro contamination
作者: Liou, BW
Lee, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-May-1999
摘要: This paper demonstrates the microcontamination analysis on wafers after they went through the conventional ULSI processing steps, by using the vapor phase decomposition/total reflection X-ray fluorescence (VPD/TXRF) technique. It was found that the wafer location in the holding cassette during the chemical cleaning step affected the cleanness of the wafer, and the class 1 environment was not enough to keep the wafer to a contamination level below 5 x 10(9) atoms/cm(2) for three days storing, The breakdown characteristic of a gate oxide was shown to be closely related with the cleanness of the surface of the oxide.
URI: http://dx.doi.org/10.1109/66.762886
http://hdl.handle.net/11536/31384
ISSN: 0894-6507
DOI: 10.1109/66.762886
期刊: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume: 12
Issue: 2
起始頁: 266
結束頁: 268
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