標題: Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process
作者: Lei, TF
Chen, JH
Wang, MF
Chao, TS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-May-1999
摘要: This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combining N2O nitridation and Chemical Mechanical Polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Q(bd) (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.
URI: http://dx.doi.org/10.1109/55.761025
http://hdl.handle.net/11536/31378
ISSN: 0741-3106
DOI: 10.1109/55.761025
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 20
Issue: 5
起始頁: 235
結束頁: 237
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