標題: Electrical characterization of Al2O3 on Si from thermally oxidized AlAs and Al
作者: Liao, CC
Chin, A
Tsai, C
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: SiCMOS;alternative gate dielectrics;high-K;Al2O3
公開日期: 1-五月-1999
摘要: The scaling limit for VLSI gate oxide (SiO2) is 15-20 Angstrom that is determined by the large direct-tunneling leakage current. Further scaling to improve device performance can be obtained using a higher dielectric constant material. We have studied the Al2O3 to use as an alternative gate dielectric. To ensure good quality, Al2O3 is thermally oxidized from MBE-grown AlAs or Al on Si-substrates. Experimental results indicate that the leakage current from oxidized AlAs is larger than that from directly oxidized Al, which may be due to the weak As2O3 inside Al2O3. The leakage current of a 53 Angstrom Al2O3 is already lower than that of SiO2 with an equivalent oxide thickness of 21 Angstrom. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0022-0248(98)01441-9
http://hdl.handle.net/11536/31363
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(98)01441-9
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 201
Issue: 
起始頁: 652
結束頁: 655
顯示於類別:會議論文


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  1. 000080406000140.pdf