標題: Reliability of ultrathin gate oxides for ULSI devices
作者: Chang, CY
Chen, CC
Lin, HC
Liang, MS
Chien, CH
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-May-1999
摘要: Ultrathin gate oxide, which is essential for low supply voltage and high driving capability, is indispensable for the continued scaling of ULSI technologies towards smaller and faster devices. Needless to say, the reliability of ultrathin oxide is of major concerns in the manufacturing of the state-of-the-art metal-oxide-semiconductor devices. This payer reviews the reliability issues regarding ultrathin gate oxide for present and future ULSI technologies. Issues including gate leakage current, time-dependent dielectric breakdown, poly-gate depletion, boron penetration, and plasma process-induced damage will be addressed. Several techniques such as nitrided oxide and alternative processes, which are proposed to improve gate oxide reliabilities, are also discussed. (C) 1999 Elsevier Science Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/S0026-2714(99)00037-2
http://hdl.handle.net/11536/31356
ISSN: 0026-2714
DOI: 10.1016/S0026-2714(99)00037-2
期刊: MICROELECTRONICS RELIABILITY
Volume: 39
Issue: 5
起始頁: 553
結束頁: 566
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