標題: A new quasi-2-D model for hot-carrier band-to-band tunneling current
作者: You, KF
Wu, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: band-to-band tunneling;gate-induced drain leakage current (GIDL);hot carrier;two-dimensional effect
公開日期: 1-六月-1999
摘要: A significant mismatch occurs when we predict the gate-induced drain leakage current (GIDL) by using existing one-dimensional (1-D) models, It's found that the gate-induced drain leakage current is attributed to not only the vertical field but also the lateral field near the drain-to-gate overlap region, Therefore, anew quasi-two-dimensional (quasi-2-D) model considering both the lateral and vertical fields for predicting the gate-induced drain leakage current is proposed by using the drain-induced energy-barrier reduction in our model, The calculated results using the developed quasi-2-D model are in good agreement with measured values for a wide range of gate and drain biases, Therefore, the proposed new;model can be used to simulate the hot-carrier band-to-band tunneling current for p-channel flash memory device.
URI: http://dx.doi.org/10.1109/16.766880
http://hdl.handle.net/11536/31319
ISSN: 0018-9383
DOI: 10.1109/16.766880
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 46
Issue: 6
起始頁: 1174
結束頁: 1179
顯示於類別:期刊論文


文件中的檔案:

  1. 000080532400015.pdf