標題: Application of selective liquid-phase deposition to fabricate contact holes without plasma damage
作者: Yeh, CF
Liu, CH
Su, JL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jun-1999
摘要: This work develops an alternative method, selective liquid-phase deposition (S-LPD), to fabricate contact holes instead of reactive ion etching. In preliminary experiments, deep n(+)/p junction diodes with contact holes prepared by S-LPD exhibit much less reverse current, unity ideality factor, larger forward current, lower contact resistance, and higher thermal stability than those prepared by reactive ion etching. Further superiority of plasma damage-free near-surface regions is also investigated using Schottky and ultrashallow junction diodes. Experimental results indicate that S-LPD can be applied to the submicron contact-hole process. The data after reverse bias temperature stress reveals the satisfactory reliability of S-LPD contact holes. This work demonstrates that the S-LPD technology is a highly promising means of replacing reactive ion etching processes to form submicron contact holes as reliably as those by wet-etching. (C) 1999 The Electrochemical Society. S0013-4651(98)08-119-1. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1391930
http://hdl.handle.net/11536/31306
ISSN: 0013-4651
DOI: 10.1149/1.1391930
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 146
Issue: 6
起始頁: 2294
結束頁: 2299
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