標題: The leakage current effect of thin gate oxides (2.4-2.7 nm) with in situ native oxide desorption
作者: Lai, JM
Chieng, WH
Lin, BC
Chin, A
Tsai, C
機械工程學系
電子工程學系及電子研究所
Department of Mechanical Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jun-1999
摘要: An intrinsic defect may exist in thin gate oxides. Such a defect can increase the leakage current in a manner similar to stress-induced leakage current. In this paper, we have shown that the effect of this intrinsic defect can be greatly reduced by in situ removal of the native oxide followed by growing a high-quality thermal oxide. By using such in situ cleaning, ultrathin oxides can be prepared with atomically smooth interfaces, good thickness uniformity, and reduced leakage currents. (C) 1999 The Electrochemical Society. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1391916
http://hdl.handle.net/11536/31305
ISSN: 0013-4651
DOI: 10.1149/1.1391916
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 146
Issue: 6
起始頁: 2216
結束頁: 2218
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