標題: A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical-mechanical planarization
作者: Lin, CF
Tseng, WT
Feng, MS
Wang, YL
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: multilayer thin film;chemical-mechanical polish;dielectrics;shallow trench isolation;silicon local oxidation
公開日期: 22-Jun-1999
摘要: A multilayer thin film structure (SiO2/SiNx/SiO2) with a one-step chemical-mechanical polish (CMP) process is developed for shallow trench filling and planarization for ULSI devices in the quarter micron regime. By fine-tuning the plasma-enhanced chemical vapor deposition (PECVD) conditions we successfully modified the stoichiometry and other characteristics of the as-deposited SiNx and oxide films. As these film characteristics are changed, the CMP removal rate selectivity between sacrificial oxide and nitride stopper layer can also be adjusted. Correspondingly, the CMP process latitude for shallow trench isolation in 0.25 mu m memory devices can be broadened by sequentially depositing multilayered oxide and nitride films with adjustable characteristics and CMP removal rates. Dishing-free wide trench areas with excellent planarity can be achieved through the integration of the proposed multilayered PECVD oxide/nitride scheme and the one-step CMP process. (C) 1999 Elsevier Science S.A. All rights reserved.
URI: http://dx.doi.org/10.1016/S0040-6090(99)00029-2
http://hdl.handle.net/11536/31274
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(99)00029-2
期刊: THIN SOLID FILMS
Volume: 347
Issue: 1-2
起始頁: 248
結束頁: 252
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