標題: Barrier characteristics of chemical vapor deposited amorphous-like tungsten silicide with in situ nitrogen plasma treatment
作者: Chang, KM
Deng, IC
Yeh, TH
Shih, CW
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jul-1999
摘要: Our team investigated the characteristics of inserting an 80 nm amorphous-like WSi1.6N0.5N/WSi1.6 barrier layer between aluminum film and a shallow diode to retard aluminum and silicon interdiffusion. In one chamber without breaking vacuum, we used a nitrogen plasma treatment to stuff nitrogen atoms into the grain boundaries of amorphous-like tungsten silicide film. The nitrogen atoms eliminated the fast diffusion paths of film, thus giving the amorphous-like tungsten silicide film a smaller diffusion coefficient. We then examined the failure of diodes with amorphous-like WSi1.6N0.5/WSi1.6 barriers which were annealed at 575 degrees C for 30 min and which had leakage currents of 10(7) and 10(8) nA/cm(2). These diodes failed due to the diffusion of aluminum along the sidewalls of the barriers and the field oxide interface. In the search for a solution to this problem we investigated the use of tetraethylorthosilicate, which is known for its thermal stability as a stress buffer. In this experiment we used tetraelhylorthosilicate to form a "contact array structure" which in turn prevented diode failure at 575 degrees C annealing for 30 min, and furthermore, the diodes in the contact array structure only began to show evidence of degradation at 600 degrees C. (C) 1999 The Electrochemical Society. S0013-4651(98)09-086-7. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1391967
http://hdl.handle.net/11536/31271
ISSN: 0013-4651
DOI: 10.1149/1.1391967
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 146
Issue: 7
起始頁: 2533
結束頁: 2539
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