標題: Effects of O-2- and N2O-plasma treatments on properties of plasma-enhanced-chemical-vapor-deposition tetraethylorthosilicate oxide
作者: Chen, YC
Yang, MZ
Tung, IC
Chen, MP
Feng, MS
Cheng, HC
Chang, CY
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: silicon dioxide;tetraethylorthosilicate;TEOS;plasma-enhanced chemical-vapor-deposition;PECVD;plasma treatment
公開日期: 1-七月-1999
摘要: The high quality silicon oxide films were prepared by plasma-enhanced chemical vapor deposition (PECVD) using tetraethylorthosilicate (TEOS)-oxygen based chemistry. The O-2- or N2O-plasma treatments were performed on the as-deposited films as an attempt to improve the properties of the TEOS oxide films. TEOS oxide film deposited at lower pressure had lower Si-OH content, less carbon impurity, and flatter surface, and hence had better electrical properties. Both O-2- and N2O-plasma would decrease the oxygen content of the oxide film, which led the composition of the film to deviate from the stoichiometric SiO2. The O-2-plasma treatment did not show the encouraging effect on the chemical structure and electrical properties of the TEOS oxide films. In contrast, the N2O-plasma treatment could be a promising means to improve the breakdown field and leakage current density of the TEOS oxide films, which was accomplished by the N2O-plasma effect to facilitate the passivation of dangling bonds, linking reaction of Si-OH bonds, nitridation reaction and densification of the amorphous silicon oxide network.
URI: http://dx.doi.org/10.1143/JJAP.38.4226
http://hdl.handle.net/11536/31266
ISSN: 0021-4922
DOI: 10.1143/JJAP.38.4226
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 38
Issue: 7A
起始頁: 4226
結束頁: 4232
顯示於類別:期刊論文


文件中的檔案:

  1. 000083278000052.pdf