標題: Investigation on multilayered chemical vapor deposited Ti TiN films as the diffusion barriers in Cu and Al metallization
作者: Hu, JC
Chang, TC
Chen, LJ
Yang, YL
Chen, SY
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jul-1999
摘要: A novel multilayered chemical vapor deposition (CVD) Ti/TiN structure was found to be a more effective diffusion barrier in Cu metallization than TIN alone. The Ti and TIN films were deposited by plasma enhanced CVD and low pressure CVD, respectively. In order to reduce the concentration of chlorine in the films, NH3 plasma posttreatment was applied to multilayered CVD-Ti/TiN films. The resistivity of the film was reduced from 240 to 120 mu Omega cm using NH3 plasma posttreatment. Cu was electroplated on the multilayered CVD-Ti/TiN films. X-ray diffraction patterns showed a small (002) peak and strong (111) peak from the Cu film. The leakage current was kept low during the device application test indicating the Ti/TiN film possessed an enhanced barrier property over the TiN film alone. (C) 1999 American Vacuum Sotiety. [S0734-2101(99)12004-9].
URI: http://dx.doi.org/10.1116/1.581777
http://hdl.handle.net/11536/31244
ISSN: 0734-2101
DOI: 10.1116/1.581777
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
Volume: 17
Issue: 4
起始頁: 2389
結束頁: 2393
Appears in Collections:Conferences Paper


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