標題: Electrical properties of multiple high-dose Si implantation in p-GaN
作者: Lai, WC
Yokoyama, M
Tsai, CC
Chang, CS
Guo, JD
Tsang, JS
Chan, SH
Chang, CY
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: GaN;implantation;activation energy
公開日期: 15-七月-1999
摘要: This work performs Si ion implantation the electrical conductive type of the p-GaN film from p-type to n-type. Multiple implantation method is also used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implant energies for the multiple implantation are 40, 100, and 200 KeV. The implant dose is 5 x 10(15) cm(-2) for each implant energy. After implantation, the samples are annealed in a N-2 ambient for different annealing temperatures and annealing times. The activation efficiency reaches as high as 20% when annealing the sample at 1000 degrees C. The carrier activation energy is about 720 meV. The low activation energy indicates that the hopping process mechanism is the dominant mechanism for the activation of the Si implantation in p-GaN. Moreover, the rectifying I-V characteristic of the p-n GaN diode is also examined.
URI: http://dx.doi.org/10.1143/JJAP.38.L802
http://hdl.handle.net/11536/31208
ISSN: 0021-4922
DOI: 10.1143/JJAP.38.L802
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 38
Issue: 7B
起始頁: L802
結束頁: L804
顯示於類別:期刊論文


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  1. 000083277600005.pdf