標題: Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh
作者: Chen, YA
Hsu, ML
Laih, LH
Hong, JW
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 22-七月-1999
摘要: A conventional plasma-enhanced chemical vapour deposition (PECVD) system with a stainless steel mesh attached to a cathode was used to fabricate an SiC-based thin-mm light-emitting diode (TFLED) at a low temperature (similar to 180 degrees C). The obtained TFLED had a brightness (B) of 1060cd/m(2) at an injection current density (J) of 600mA/cm(2) and a threshold voltage (V-th) of 12.6V, which were much better than those of 330cd/m(2) and 18.5V for an amorphous SiC-based TFLED fabricated by the same PECVD system without a stainless steel mesh.
URI: http://dx.doi.org/10.1049/el:19990786
http://hdl.handle.net/11536/31199
ISSN: 0013-5194
DOI: 10.1049/el:19990786
期刊: ELECTRONICS LETTERS
Volume: 35
Issue: 15
起始頁: 1274
結束頁: 1275
顯示於類別:期刊論文


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  1. 000081960100045.pdf