標題: Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides
作者: Zous, NK
Wang, TH
Yeh, CC
Tsai, CW
Huang, CM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2-Aug-1999
摘要: The role of positive oxide charge in excess low-level leakage current in tunnel oxides induced by Fowler/Nordheim stress is investigated. A correlation between stress-induced gate current and substrate current in an n-channel metal-oxide-semiconductor field-effect transistor is observed. Both the gate current and the substrate current exhibit a significant transient effect. The mechanisms of the stress-induced currents and their field dependence are explored. Positive oxide charge tunnel detrapping is found to be the cause of the observed transient behavior in the two currents. The stress-created positive oxide charge can be significantly annealed by substrate hot electron injection. (C) 1999 American Institute of Physics. [S0003-6951(99)02226-3].
URI: http://hdl.handle.net/11536/31158
ISSN: 0003-6951
期刊: APPLIED PHYSICS LETTERS
Volume: 75
Issue: 5
起始頁: 734
結束頁: 736
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