標題: Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature
作者: Chen, JF
Wang, JS
Wang, PY
Wong, HZ
電子物理學系
Department of Electrophysics
公開日期: 23-Aug-1999
摘要: Capacitance-frequency measurement is used to study In0.12Ga0.88As/GaAs p-i-n superlattice, with superlattice layer grown at 300 degrees C by molecular-beam epitaxy. Three traps are observed, and their parameters are consistent with those obtained from deep-level transient spectroscopy. Among these three traps, the trap (E-a = 0.45 +/- 0.02 eV, sigma = 6 +/- 4x10(-17) cm(2)) shows an abnormal increase of capacitance with increasing frequency, similar to that observed from the 0.66 eV trap in low-temperature grown GaAs p-i-n structure, suggesting that it is created by the low-temperature growth and is a generation-recombination center. This result also shows that the capacitance-frequency measurement is effective in studying the generation-recombination centers. (C) 1999 American Institute of Physics. [S0003-6951(99)01434-5].
URI: http://hdl.handle.net/11536/31147
ISSN: 0003-6951
期刊: APPLIED PHYSICS LETTERS
Volume: 75
Issue: 8
起始頁: 1092
結束頁: 1094
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