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dc.contributor.authorOu, Jen_US
dc.contributor.authorPan, YCen_US
dc.contributor.authorLee, WHen_US
dc.contributor.authorShu, CKen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorLee, MCen_US
dc.contributor.authorChen, WHen_US
dc.contributor.authorChiang, CIen_US
dc.contributor.authorChang, Hen_US
dc.contributor.authorChen, WKen_US
dc.date.accessioned2014-12-08T15:46:16Z-
dc.date.available2014-12-08T15:46:16Z-
dc.date.issued1999-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.38.4958en_US
dc.identifier.urihttp://hdl.handle.net/11536/31130-
dc.description.abstractA thermodynamic analysis tailored with a high-temperature parameter was performed for metalorganic vapor phase epitaxial (MOVPE) growth of InxGa1-xN alloys. Accordingly, a series of InGaN samples were prepared under various input In flow rates and growth temperatures. Theoretical results indicate that the In solid concentration tends to increase with increasing In flow rate and with decreasing temperature, whereas the metal droplets form more easily on the surface at lower growth temperatures and higher In fluxes, which are in good agreement with our experimental data.en_US
dc.language.isoen_USen_US
dc.subjecthigh-temperature parameteren_US
dc.subjectthermodynamic analysisen_US
dc.subjectMOVPEen_US
dc.subjectInGaNen_US
dc.titleA high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaNen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.38.4958en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume38en_US
dc.citation.issue9Aen_US
dc.citation.spage4958en_US
dc.citation.epage4961en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000083181800002-
dc.citation.woscount4-
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