標題: A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN
作者: Ou, J
Pan, YC
Lee, WH
Shu, CK
Lin, HC
Lee, MC
Chen, WH
Chiang, CI
Chang, H
Chen, WK
電子物理學系
Department of Electrophysics
關鍵字: high-temperature parameter;thermodynamic analysis;MOVPE;InGaN
公開日期: 1-Sep-1999
摘要: A thermodynamic analysis tailored with a high-temperature parameter was performed for metalorganic vapor phase epitaxial (MOVPE) growth of InxGa1-xN alloys. Accordingly, a series of InGaN samples were prepared under various input In flow rates and growth temperatures. Theoretical results indicate that the In solid concentration tends to increase with increasing In flow rate and with decreasing temperature, whereas the metal droplets form more easily on the surface at lower growth temperatures and higher In fluxes, which are in good agreement with our experimental data.
URI: http://dx.doi.org/10.1143/JJAP.38.4958
http://hdl.handle.net/11536/31130
ISSN: 0021-4922
DOI: 10.1143/JJAP.38.4958
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 38
Issue: 9A
起始頁: 4958
結束頁: 4961
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