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dc.contributor.authorWang, MYen_US
dc.contributor.authorKo, FHen_US
dc.contributor.authorWang, TKen_US
dc.contributor.authorYang, CCen_US
dc.contributor.authorHuang, TYen_US
dc.date.accessioned2014-12-08T15:46:15Z-
dc.date.available2014-12-08T15:46:15Z-
dc.date.issued1999-09-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1392495en_US
dc.identifier.urihttp://hdl.handle.net/11536/31115-
dc.description.abstractThe radioactive tracer technique was applied to investigate the out-diffusion of manganese and zinc impurities from deep-ultraviolet (DUV) photoresist. Two important process parameters, viz., baking temperature and the type of substrate (i.e., bare silicon, polysilicon, oxide, or nitride), were evaluated. Our results indicated that diffusion ratios were ail below 6%, irrespective of the substrate type and baking temperature. The substrate type did not appear to strongly affect the metallic impurity out-diffusion from DUV photoresist. However, solvent evaporation was found to have a significant effect on impurity diffusion. A new model, together with a new parameter, was proposed to describe the out-diffusion behavior of impurities from DUV photoresist. This model could explain the diffusion ratio of metallic impurities in photoresist layers under various baking conditions. The effectiveness of various wet cleaning recipes in removing metallic impurities such as manganese and zinc was also studied. It was found that (i) bath life due to temperature change can considerably affect the cleaning efficiency, and (ii) hot water immersion can effectively dissolve the impurities from the wafer surface. (C) 1999 The Electrochemical Society. S0013-4651(98)11-080-7. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleCharacterization and modeling of out-diffusion of manganese and zinc impurities from deep ultraviolet photoresisten_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1392495en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume146en_US
dc.citation.issue9en_US
dc.citation.spage3455en_US
dc.citation.epage3460en_US
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:000082607600050-
dc.citation.woscount12-
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