標題: Characterization and modeling of out-diffusion of manganese and zinc impurities from deep ultraviolet photoresist
作者: Wang, MY
Ko, FH
Wang, TK
Yang, CC
Huang, TY
奈米中心
Nano Facility Center
公開日期: 1-Sep-1999
摘要: The radioactive tracer technique was applied to investigate the out-diffusion of manganese and zinc impurities from deep-ultraviolet (DUV) photoresist. Two important process parameters, viz., baking temperature and the type of substrate (i.e., bare silicon, polysilicon, oxide, or nitride), were evaluated. Our results indicated that diffusion ratios were ail below 6%, irrespective of the substrate type and baking temperature. The substrate type did not appear to strongly affect the metallic impurity out-diffusion from DUV photoresist. However, solvent evaporation was found to have a significant effect on impurity diffusion. A new model, together with a new parameter, was proposed to describe the out-diffusion behavior of impurities from DUV photoresist. This model could explain the diffusion ratio of metallic impurities in photoresist layers under various baking conditions. The effectiveness of various wet cleaning recipes in removing metallic impurities such as manganese and zinc was also studied. It was found that (i) bath life due to temperature change can considerably affect the cleaning efficiency, and (ii) hot water immersion can effectively dissolve the impurities from the wafer surface. (C) 1999 The Electrochemical Society. S0013-4651(98)11-080-7. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1392495
http://hdl.handle.net/11536/31115
ISSN: 0013-4651
DOI: 10.1149/1.1392495
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 146
Issue: 9
起始頁: 3455
結束頁: 3460
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