標題: Characteristics of novel polysilicon oxide by anodic oxidation
作者: Yeh, CF
Liu, JS
Chiang, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Sep-1999
摘要: For nonvolatile memory applications, a novel oxide grown on polysilicon by anodic oxidation (anodic polyoxide) is first investigated. In this work, the electrical characteristics of anodic polyoxide is discussed and compared with the conventional thermal polyoxide. The results show that the anodic polyoxide exhibits considerably excellent characteristics, i.e., low leakage current, high breakdown electric field, and high reliabilities.
URI: http://dx.doi.org/10.1016/S0167-9317(99)00378-0
http://hdl.handle.net/11536/31100
ISSN: 0167-9317
DOI: 10.1016/S0167-9317(99)00378-0
期刊: MICROELECTRONIC ENGINEERING
Volume: 48
Issue: 1-4
起始頁: 235
結束頁: 238
Appears in Collections:Conferences Paper


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