標題: Hydrogen-desorption kinetic measurement on the Si(100)-2x1 : H surface by directly counting desorption sites
作者: Lin, DS
Chen, RP
物理研究所
Institute of Physics
公開日期: 15-九月-1999
摘要: The desorption kinetics of hydrogen from the Si(100)-2x1:H monohydride surface was investigated by means of variable-temperature scanning-tunneling microscopy (STM) in the temperature range between 590 and 668 K. By directly counting the number of desorption sites in the STM images for various annealing time at several temperatures, an activation barrier of E-d = 2.22+/-0.20 eV and a pre-exponential factor of nu(d) = 3.4 x 10(13+/-0.3) s(-1) for the H-2 recombinative desorption are deduced. The sequential images acquired in real times show that hydrogen desorbs in a random manner and the interaction between two neighboring paired dangling bond sites is repulsive.
URI: http://dx.doi.org/10.1103/PhysRevB.60.R8461
http://hdl.handle.net/11536/31086
ISSN: 0163-1829
DOI: 10.1103/PhysRevB.60.R8461
期刊: PHYSICAL REVIEW B
Volume: 60
Issue: 12
起始頁: R8461
結束頁: R8464
顯示於類別:期刊論文