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dc.contributor.authorChang, KMen_US
dc.contributor.authorLee, TCen_US
dc.contributor.authorSun, YLen_US
dc.date.accessioned2014-12-08T15:46:12Z-
dc.date.available2014-12-08T15:46:12Z-
dc.date.issued1999-10-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/31072-
dc.description.abstractThe characteristics of polyoxides grown by different methods in order to find the best way of growing high qualities of polyoxide were investigated in this work. Thermal, rapid thermal oxidation (RTO), and tetraethylorthosilicate (TEOS) deposition methods were used to grow the polyoxides. RTO provided a smoother interface of polyoxide/polysilicon than that of thermal furnace method. TEOS deposition method resulted in a smooth polyoxide/poly-1 interface due to no polysilicon consumption. The polyoxide grown by thermal method had the worst characteristics, while the post-deposition RTO method had the best qualities (low leakage current, high breakdown electric field, low voltage shift, and high charge-to-breakdown). The high qualities of polyoxide grown by post-deposition RTO method were due to the smooth polyoside/poly-1 interface and less electron trapping.en_US
dc.language.isoen_USen_US
dc.subjectpolyoxideen_US
dc.subjectRTOen_US
dc.subjecttetraethylorthosilicateen_US
dc.subjectTEOSen_US
dc.subjectpost-depositionen_US
dc.subjectcharge-to-breakdownen_US
dc.titleComparison of the characteristics of polyoxides grown by thermal, rapid thermal oxidation, and tetraethylorthosilicate deposition methodsen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume38en_US
dc.citation.issue10en_US
dc.citation.spage5731en_US
dc.citation.epage5734en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000083622000008-
dc.citation.woscount2-
Appears in Collections:Articles


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