標題: Comparison of the characteristics of polyoxides grown by thermal, rapid thermal oxidation, and tetraethylorthosilicate deposition methods
作者: Chang, KM
Lee, TC
Sun, YL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: polyoxide;RTO;tetraethylorthosilicate;TEOS;post-deposition;charge-to-breakdown
公開日期: 1-十月-1999
摘要: The characteristics of polyoxides grown by different methods in order to find the best way of growing high qualities of polyoxide were investigated in this work. Thermal, rapid thermal oxidation (RTO), and tetraethylorthosilicate (TEOS) deposition methods were used to grow the polyoxides. RTO provided a smoother interface of polyoxide/polysilicon than that of thermal furnace method. TEOS deposition method resulted in a smooth polyoxide/poly-1 interface due to no polysilicon consumption. The polyoxide grown by thermal method had the worst characteristics, while the post-deposition RTO method had the best qualities (low leakage current, high breakdown electric field, low voltage shift, and high charge-to-breakdown). The high qualities of polyoxide grown by post-deposition RTO method were due to the smooth polyoside/poly-1 interface and less electron trapping.
URI: http://hdl.handle.net/11536/31072
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 38
Issue: 10
起始頁: 5731
結束頁: 5734
顯示於類別:期刊論文


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  1. 000083622000008.pdf