標題: Optimization of OMVPE-grown GaInP/GaAs quantum well interfaces
作者: Chiou, SW
Lee, CP
Hong, JM
Chen, CW
Tsou, Y
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: high-quality quantum wells;GaInP/GaAs quantum wells;PH3
公開日期: 1-Oct-1999
摘要: A new and improved method of growing Al-free GaInP/GaAs quantum wells (QWs) is presented. We found that both interfaces are important for obtaining a high-quality quantum well. With an added H-2 purge and PH3 preflow procedure, we have significantly improved the GaInP on GaAs interface by eliminating the unwanted dark line region at the interface. At the GaAs on GaInP interface, we added a thin GaAsP layer. This layer effectively prevents the In memory effect at the interface. As a result of this new growth procedure, a linewidth of 6.7 meV (at 20 It) for the quantum well emission was achieved. (C) 1999 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0022-0248(99)00329-2
http://hdl.handle.net/11536/31058
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(99)00329-2
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 206
Issue: 3
起始頁: 166
結束頁: 170
Appears in Collections:Articles


Files in This Item:

  1. 000083351700002.pdf