標題: H-2/O-2 PLASMA ON POLYSILICON THIN-FILM TRANSISTOR
作者: CHERN, HN
LEE, CL
LEI, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-三月-1993
摘要: This letter reports that the H-2 plasma followed by the O2 plasma is more effective to passivate grain boundary states in the polysilicon thin film. Polysilicon thin-film transistors (TFT's) made after applying H-2/O2 Plasma treatment can exhibit a turn-on threshold voltage of -0.1 V, a subthreshold swing of 0.154 V/decade, an ON/OFF current ratio I(on)/I(off) over 1 x 10(8), and an electron mobility of 40.2 cm2/V . S.
URI: http://dx.doi.org/10.1109/55.215129
http://hdl.handle.net/11536/3103
ISSN: 0741-3106
DOI: 10.1109/55.215129
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 14
Issue: 3
起始頁: 115
結束頁: 117
顯示於類別:期刊論文


文件中的檔案:

  1. A1993KN76400007.pdf