標題: Observation of a dominant EL2-like mid-gap trap in In0.12Ga0.88As/GaAs superlattice grown at low temperature by molecular beam epitaxy
作者: Chen, JF
Wang, PY
Wang, JS
Wong, HZ
電子物理學系
Department of Electrophysics
關鍵字: In0.12Ga0.88As/GaAs superlattice;low-temperature MBE growth;deep levels
公開日期: 1-Nov-1999
摘要: Admittance spectroscopy is used to study a low-temperature (LT)-grown relaxed In0.12Ga0.88As/GaAs p-i-n superlattice. The capacitance-frequency spectra show two step-like trapping effects which are explained by the existence of two traps (E-a = 0.73 eV, sigma = 4.6 x 10(-11) cm(2) and E-a = 0.75 eV, sigma = 3.7 x 10(-15) cm(2)) in the LT-grown superlattice region. These two traps are the dominating defects observed in deep-level transient spectroscopy with one being a majority trap and the other being a minority trap. The emission parameters and photo-capacitance quenching effect for the 0.75 eV trap agree with those known for EL2 defects, suggesting that the EL2 defect is strongly enhanced in InGaAs/GaAs by LT growth.
URI: http://hdl.handle.net/11536/31014
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 38
Issue: 11
起始頁: 6421
結束頁: 6422
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