標題: Effectively blocking copper diffusion at low-k hydrogen silsesquioxane/copper interface
作者: Liu, PT
Chang, TC
Yang, YL
Cheng, YF
Shih, FY
Lee, JK
Tsai, E
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: low-k;hydrogen silsesquioxane;block;copper diffusion;hydrogen plasma
公開日期: 1-十一月-1999
摘要: The interaction between copper and low-k hydrogen silsesquioxane (HSQ) film was investigated using a Cu/HSQ/Si metal insulation semiconductor capacitor and hydrogen plasma posttreatment. Owing to serious diffusion of copper atoms in HSQ film, degradation of the dielectric properties are significant with the increase of thermal stress. By applying hydrogen plasma treatment to the HSQ film, however, the phenomena of serious Cu penetration were not observed by electrical characteristic measurements and secondary ion mass spectroscopy (SIMS) analysis even in the absence of diffusion barrier layers. Therefore, hydrogen plasma treatment can effectively block the diffusion of copper in low-k HSQ film.
URI: http://hdl.handle.net/11536/31012
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 38
Issue: 11
起始頁: 6247
結束頁: 6252
顯示於類別:期刊論文


文件中的檔案:

  1. 000084041800015.pdf