標題: Improvement of junction leakage of nickel silicided junction by a Ti-capping layer
作者: Hou, TH
Lei, TF
Chao, TS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: junction leakage;nickel silicide;titanium
公開日期: 1-Nov-1999
摘要: A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction, The Ti-cap samples exhibit a very low leakage current density about 1 x 10 A/cm(2) after 600 degrees C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Anger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.
URI: http://dx.doi.org/10.1109/55.798047
http://hdl.handle.net/11536/31000
ISSN: 0741-3106
DOI: 10.1109/55.798047
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 20
Issue: 11
起始頁: 572
結束頁: 573
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