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dc.contributor.authorChang, TCen_US
dc.contributor.authorMor, YSen_US
dc.contributor.authorLiu, PTen_US
dc.contributor.authorSze, SMen_US
dc.contributor.authorYang, YLen_US
dc.contributor.authorTsai, MSen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:46:05Z-
dc.date.available2014-12-08T15:46:05Z-
dc.date.issued1999-11-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0040-6090(99)00549-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/30995-
dc.description.abstractThe new solutions, hydroxylamine sulfate [(NH2OH)(2)H2SO4] combined with CuSO4, for cleaning Al via were investigated. Tt is found that the cleaning capability of hydroxylamine sulfate combined with CuSO4 is better than that of hydroxylamine sulfate. Low via resistance of electrical test structure is obtained if the via is cleaned by this new cleaning solution. The hydroxylamine sulfate can efficiently remove Al3O2 and leave the clean Al on the surface of via. Then, the Cu ion in this new solution will immediately react with clean Al and form a copper passivating layer on the surface of via. The copper is more stable than aluminum in the environment and hard to be oxidized. Therefore, hydroxylamine sulfate combined with CuSO4 can provide excellent cleaning capability for aluminum via holes. Also, the clean surface on the bottom of via is helpful for tungsten nucleation in via during CVD-W deposition. Therefore, a low via resistance and good selectivity of tungsten plug are obtained when the Al via is precleaned with this new solution. (C) 1999 Elsevier Science S.A. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectprecleaningen_US
dc.subjectselective CVD-Wen_US
dc.subjecthydroxylamine sulfateen_US
dc.subjectpassivationen_US
dc.titleThe novel precleaning treatment for selective tungsten chemical vapor depositionen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0040-6090(99)00549-0en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume355en_US
dc.citation.issueen_US
dc.citation.spage451en_US
dc.citation.epage455en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000084500800079-
Appears in Collections:Conferences Paper


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